High pressure wafer processing systems and related methods

ABSTRACT

A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/835,356 filed Dec. 7, 2017, which claims benefit of U.S. ProvisionalPatent Application Ser. No. 62/470,057, filed on Mar. 10, 2017, whichare each herein incorporated by reference.

TECHNICAL FIELD

This specification relates to wafer processing systems and relatedmethods.

BACKGROUND

Micro-electronic circuits and other micro-scale devices are generallymanufactured from a substrate or wafer, such as a silicon or othersemiconductor material wafer. Multiple metal layers are applied onto thesubstrate to form micro-electronic or other micro-scale components or toprovide electrical interconnects. These metal layers, e.g., copper, areplated onto the substrate, and form the components and interconnects ina sequence of photolithographic, plating, etching, polishing or othersteps.

To achieve desired material properties, the substrate is typically putthrough an annealing process in which the substrate is quickly heated,usually to about 200-500° C. and more typically to about 300-400° C. Thesubstrate may be held at these temperatures for a relatively short time,e.g., 60-300 seconds. The substrate is then rapidly cooled, with theentire process usually taking only a few minutes. Annealing may be usedto change the material properties of the layers on the substrate. It mayalso be used to activate dopants, drive dopants between films on thesubstrate, change film-to-film or film-to-substrate interfaces, densifydeposited films, or to repair damage from ion implantation.

As feature sizes for microelectronic devices and interconnects becomesmaller, the allowable defect rate decreases substantially. Some defectsresult from contaminant particles. Other defects can result fromincomplete processing of certain regions of the wafer, e.g., failure togrow a film at the bottom of a trench.

Various annealing chambers have been used in the past. In single waferprocessing equipment, these annealing chambers typically position thesubstrate between or on heating and cooling elements, to control thetemperature profile of the substrate. However, achieving precise andrepeatable temperature profiles, as well as an acceptable level ofdefects, can present engineering challenges.

SUMMARY

In one aspect, a high-pressure processing system for processing asubstrate includes a first chamber, a pedestal positioned within thefirst chamber to support the substrate, a second chamber adjacent thefirst chamber, a vacuum processing system configured to lower a pressurewithin the second chamber to near vacuum, a valve assembly between thefirst chamber and the second chamber to isolate the pressure within thefirst chamber from the pressure within the second chamber, a gasdelivery system configured to introduce a processing gas into the firstchamber and to increase the pressure within the first chamber to atleast 10 atmospheres while the processing gas is in the first chamberand while the first chamber is isolated from the second chamber, and acontroller. The controller is configured to operate the gas deliverysystem to introduce the processing gas into the first chamber, and toopen the valve assembly to enable the substrate to be transferred fromthe first chamber to the second chamber.

Implementations may include one or more of the following features.

The valve assembly may include a slit valve between the first chamberand the second chamber. The slit valve may include a slit through a wallbetween the first chamber and the second chamber, and an arm movablebetween a first position in which the arm covers the slit to form a sealbetween the first chamber and the second chamber and a second positionin which the slit is uncovered. The substrate may be transferrablethrough the slit valve from the first chamber to the second chamber. Thearm may be configured to engage an inner surface of the wall definingthe first chamber in the first position to form the seal between thefirst chamber and the second chamber. An actuator may move the armrelative to the slit. The actuator may be coupled to a proximal end ofthe arm outside of the second chamber or within the second chamber. Thearm may be configured to engage an outer surface of the first chamber inthe first position to form the seal between the first chamber and thesecond chamber.

The pedestal may be fixed to walls defining the first chamber. Wallsdefining the first chamber may be movable relative to a base definingthe first chamber to provide the valve assembly. The pedestal may besuspended from a ceiling of the first chamber.

The gas delivery system may include an exhaust system to exhaust gaswithin the first chamber, thereby depressurizing the first chamber. Thecontroller may be configured to operate the exhaust system todepressurize the first chamber before the valve assembly is opened. Avacuum processing system may be configured to generate a pressure withinthe second chamber, the pressure being less than 1 atmosphere.

A heating element may be configured to apply heat to the substrate toanneal the substrate when the substrate is supported on the pedestal.The heating element may be positioned within the pedestal. The heatingelement may be positioned within walls defining the first chamber.

A robot arm may be configured to transfer the substrate through thevalve assembly from the first chamber to the second chamber. A lift pinassembly may lift the substrate from the pedestal.

A semiconductor fabrication apparatus may include a central vacuumchamber having a robot positioned therein, a factory interface modulecoupled to the central vacuum chamber, a low-pressure substrateprocessing system coupled to the central vacuum chamber by a firstvacuum valve, and the high-pressure processing system described above.The second chamber may be coupled to the central vacuum chamber by asecond vacuum valve.

In another aspect, a semiconductor processing method includesintroducing a processing gas into a first chamber to process a layer ona substrate and to generate a pressure of at least 10 atmospheres withinthe first chamber during processing of the layer, and transferring thesubstrate directly from the first chamber to a second chamber, thesecond chamber having a pressure less than 1 atmosphere.

Implementations may include one or more of the following features. Afterintroducing the processing gas and before transferring the substrate,the processing gas may be exhausted from the first chamber to reduce thepressure within the first chamber. A slit valve between the firstchamber and the second chamber may be opened before transferring thesubstrate. The substrate may be transferred to the second chamberthrough the slit valve. Opening the slit valve may include moving an armfrom a first position in which the arm and the slit valve form a sealbetween the first chamber and the second chamber and a second positionin which the slit valve is opened. Heat may be applied to the substrateto anneal the substrate after the processing gas is introduced. Thesubstrate may include a silicon material.

Advantages of the foregoing may include, but are not limited to, thosedescribed below and herein elsewhere. A high-pressure processing systemin accordance to certain aspects can improve thoroughness of processing,e.g., annealing or deposition, of a layer of material on a substrate.For example, by being annealed or deposited in a high pressureenvironment, the resulting material can more easily infiltrate intocomplex surface geometry, e.g., etched geometries, on the substrate. Asa result, fewer defects may occur during the process.

The details of one or more implementations of the subject matterdescribed in this specification are set forth in the accompanyingdrawings and the description below. Other potential features, aspects,and advantages will become apparent from the description, the drawings,and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of a processing platform.

FIG. 2 is a diagram of a high-pressure system.

FIG. 3 is a schematic side view of an example of a high-pressureprocessing system.

FIG. 4 is a schematic side view of another example of a high-pressureprocessing system.

FIG. 5 is a schematic side view of another example of a high-pressureprocessing system.

FIG. 6 is a schematic side view of another example of a high-pressureprocessing system.

FIG. 7 is a schematic side view of a pedestal.

DETAILED DESCRIPTION

As noted above, some defects can result from incomplete processing ofcertain regions of a substrate. However, high-pressure processing canimprove consistency of processing across the substrate. In particular,annealing or deposition can occur in the high-pressure environment; thiscan help improve thoroughness of processing of the layer of material. Asa result, the layer can be more uniformly formed or modified across thesubstrate. High-pressure processing can also provide access to chemicalreactions that are not available at lower pressures.

Another issue is that certain materials, such as copper, will rapidlyoxidize when exposed to oxygen, at temperatures over about 70° C. If thecopper or other material oxidizes, the substrate may no longer beuseable, or the oxide layer must first be removed before furtherprocessing. These are both unacceptable options for efficientmanufacturing. Accordingly, a design factor is to isolate the substratefrom oxygen, when the substrate temperature is over about 70° C. Sinceoxygen is of course present in ambient air, avoiding oxidation of copperduring annealing also can present engineering challenges. As describedherein, the substrate can be transferred between the high-pressureprocessing chamber and different processing chambers in thelow-pressure, e.g., near-vacuum, environment to avoid contamination andoxidation of the substrate.

The temperature uniformity of the wafer is another significant designfactor as it affects the crystalline structure of copper or othermaterials on the wafer. The processing system, e.g., the pedestalconfiguration, can provide uniform heating of the wafer.

Another consideration is serviceability. It is important to be able torecover or service a chamber as quickly and efficiently as possible. Thechamber configurations described herein can be easy to service.

FIG. 1 shows an integrated multi-chamber substrate processing systemsuitable for performing at least one embodiment of the physical vapordeposition, the chemical vapor deposition, and/or annealing processesdescribed herein. In general, the multi-chamber substrate processingsystem includes at least one high-pressure processing chamber, e.g.,able to operate at pressures above 10 atmospheres, to perform ahigh-pressure process such as deposition or annealing, and at least onelow-pressure processing chamber, e.g., able to operate a pressures belowabout 100 milliTorr, to perform a low-pressure process such as etching,deposition, or thermal treatment. In some implementations themulti-chamber processing system is a cluster tool having a centraltransfer chamber that is at low pressure and from which multipleprocessing chambers can be accessed.

Some embodiments of the processes and systems described herein relate toforming layers of material, e.g., metal and metal silicide barriers, forfeature definitions. For example, a first metal layer is deposited on asilicon substrate and annealed to form a metal silicide layer. A secondmetal layer is then deposited on the metal silicide layer to fill thefeature. The annealing process to form the metal silicide layer may beperformed in multiple annealing steps.

FIG. 1 is a schematic top view of one embodiment a processing platform100 including two transfer chambers 102, 104, transfer robots 106, 108positioned in the transfer chambers 102, 104, respectfully, andprocessing chambers 110, 112, 114, 116, 118, disposed on the twotransfer chambers 102, 104. The first and second transfer chambers 102,104 are central vacuum chambers that interface with adjacent processingchambers 110, 112, 114, 116, 118. The first transfer chamber 102 and thesecond transfer chamber 104 are separated by pass-through chambers 120,which may comprise cooldown or pre-heating chambers. The pass-throughchambers 120 also may be pumped down or ventilated during substratehandling when the first transfer chamber 102 and the second transferchamber 104 operate at different pressures. For example, the firsttransfer chamber 102 may operate between about 100 milliTorr and about 5Torr, such as about 40 milliTorr, and the second transfer chamber 104may operate between about 1×10−5 Torr and about 1×10−8 Ton, such asabout 1×10−7 Torr.

The processing platform 100 is automated by programming a controller122. The controller 122 can operate individual operations for each ofthe chambers of the processing platform 100 to process the substrate.

The first transfer chamber 102 is coupled with two degas chambers 124,two load lock chambers 128, a reactive pre-clean chamber 118, at leastone physical vapor deposition chamber, preferably a long throw physicalvapor deposition (PVD) chamber 110, and the pass-through chambers 120.The pre-clean chamber may be a PreClean II chamber, commerciallyavailable from Applied Materials, of Santa Clara, Calif. Substrates (notshown) are loaded into the processing platform 100 through load lockchambers 128. For example, a factory interface module 132, if present,would be responsible for receiving one or more substrates, e.g., wafers,cassettes of wafers, or enclosed pods of wafers, from either a humanoperator or an automated substrate handling system. The factoryinterface module 132 can open the cassettes or pods of substrates, ifapplicable, and move the substrates to and from the load lock chambers128. The processing chambers 110, 112, 114, 116, 118 receive thesubstrates from the transfer chambers 102, 104, process the substrates,and allow the substrates to be transferred back into the transferchambers 102, 104. After being loaded into the processing platform 100,the substrates are sequentially degassed and cleaned in degas chambers124 and the pre-clean chamber 118, respectively.

Each of the processing chambers are isolated from the transfer chambers102, 104 by an isolation valve which allows the processing chambers tooperate at a different level of vacuum than the transfer chambers 102,104 and prevents any gasses being used in the processing chamber frombeing introduced into the transfer chamber. The load lock chambers 128are also isolated from the transfer chamber 102, 104 with isolationvalves. Each load lock chamber 128 has a door which opens to the outsideenvironment, e.g., opens to the factory interface module 132. In normaloperation, a cassette loaded with substrates is placed into the loadlock chamber 128 through the door from the factory interface module 132and the door is closed. The load lock chamber 128 is then evacuated tothe same pressure as the transfer chamber 102 and the isolation valvebetween the load lock chamber 128 and the transfer chamber 102 isopened. The robot in the transfer chamber 102 is moved into position andone substrate is removed from the load lock chamber 128. The load lockchamber 128 is preferably equipped with an elevator mechanism so as onesubstrate is removed from the cassette, the elevator moves the stack ofwafers in the cassette to position another wafer in the transfer planeso that it can be positioned on the robot blade.

The transfer robot 106 in the transfer chamber 102 then rotates with thesubstrate so that the substrate is aligned with a processing chamberposition. The processing chamber is flushed of any toxic gasses, broughtto the same pressure level as the transfer chamber, and the isolationvalve is opened. The transfer robot 106 then moves the wafer into theprocessing chamber where it is lifted off the robot. The transfer robot106 is then retracted from the processing chamber and the isolationvalve is closed. The processing chamber then goes through a series ofoperations to execute a specified process on the wafer. When complete,the processing chamber is brought back to the same environment as thetransfer chamber 102 and the isolation valve is opened. The transferrobot 106 removes the wafer from the processing chamber and then eithermoves it to another processing chamber for another operation or replacesit in the load lock chamber 128 to be removed from the processingplatform 100 when the entire cassette of wafers has been processed.

The transfer robots 106, 108 include robot arms 107, 109, respectively,that support and move the substrate between different processingchambers. The transfer robot 106 moves the substrate between the degaschambers 124 and the pre-clean chamber 118. The substrate may then betransferred to the long throw PVD chamber 110 for deposition of amaterial thereon.

The second transfer chamber 104 is coupled to a cluster of processingchambers 110, 112, 114, 130. The processing chambers 110, 112 may bechemical vapor deposition (CVD) chambers for depositing materials, suchas tungsten, as desired by the operator. An example of a suitable CVDchamber includes W×Z™ chambers, commercially available from AppliedMaterials, Inc., located in Santa Clara, Calif. The CVD chambers arepreferably adapted to deposit materials by atomic layer deposition (ALD)techniques as well as by conventional chemical vapor depositiontechniques. The processing chambers 114 and 130 may be Rapid ThermalAnnealing (RTA) chambers, or Rapid Thermal Process (RTP) chambers, thatcan anneal substrates at vacuum or near vacuum pressures. An example ofa RTA chamber 114 is a RADIANCE™ chamber, commercially available fromApplied Materials, Inc., Santa Clara, Calif. Alternatively, theprocessing chambers 114 and 130 may be W×Z™ deposition chambers capableof performing high temperature CVD deposition, annealing processes, orin situ deposition and annealing processes. The PVD processed substratesare moved from the first transfer chamber 102 into the second transferchamber 104 via the pass-through chambers 120. Thereafter, the transferrobot 108 moves the substrates between one or more of the processingchambers 110, 112, 114, 130 for material deposition and annealing asrequired for processing.

RTA chambers (not shown) may also be disposed on the first transferchamber 102 of the processing platform 100 to provide post depositionannealing processes prior to substrate removal from the platform 100 ortransfer to the second transfer chamber 104.

While not shown, a plurality of vacuum pumps is disposed in fluidcommunication with each transfer chamber and each of the processingchambers to independently regulate pressures in the respective chambers.The pumps may establish a vacuum gradient of increasing pressure acrossthe apparatus from the load lock chamber to the processing chambers.

Alternatively or in addition, a plasma etch chamber, such as a DecoupledPlasma Source chamber (DPS™ chamber) manufactured by Applied Materials,Inc., of Santa Clara, Calif., may be coupled to the processing platform100 or in a separate processing system for etching the substrate surfaceto remove unreacted metal after PVD metal deposition and/or annealing ofthe deposited metal. For example, in forming cobalt silicide from cobaltand silicon material by an annealing process, the etch chamber may beused to remove unreacted cobalt material from the substrate surface.

Other etch processes and apparatus, such as a wet etch chamber, can beused in conjunction with the process and apparatus described herein.

FIG. 2 illustrates a controlled high-pressure system 200 that creates ahigh-pressure environment for processing a substrate and a low-pressureenvironment for the substrate when the substrate is being transferredbetween processing chambers. The controlled high-pressure system 200includes a first high-pressure chamber 202 and a second vacuum chamber204. The first chamber 202 can correspond to one of the processingchambers 110, 112, 114, 116, 118, 130 of the processing platform 100,and the second chamber 204 can correspond to one of the transferchambers 102, 104 of the processing platform 100. Alternatively, in someimplementations, one of the processing chambers 110, 112, 114, 116, 118,130 includes both the first chamber 202 and the second chamber 204. Thefirst chamber 202 corresponds to an inner chamber, and the secondchamber 204 corresponds to an outer chamber surrounding the innerchamber.

The pressure within the first chamber 202 can be controlledindependently of the pressure in the second chamber 204. If the firstand second chambers 202, 204 are distinct from the transfer chambers,the first and second chambers 202, 204 can have pressures that arecontrolled independently of the pressures within the transfer chambers.The controlled high-pressure system 200 further includes a gas deliverysystem 206, a vacuum processing system 208, and a controller 210. Insome examples, the controller 122 of the processing platform 100 caninclude the controller 210.

The second chamber 204 is a low pressure chamber adjacent to the firstchamber 202. In some implementations, the second chamber 204 alsosurrounds the first chamber 202. The second chamber 204 can correspondto a transfer chamber, e.g., the transfer chamber 102 or the transferchamber 104, that receives the substrate between different processingchambers. The low pressure environment of the second chamber 204 caninhibit contamination and/or oxidation of the substrate or the materialformed on the substrate.

The gas delivery system 206 is operated to pressurize and depressurizethe first chamber 202. The first chamber 202 is a high-pressureprocessing chamber that receives a processing gas from the gas deliverysystem 206 and establishes a high pressure, e.g., at a pressure of atleast 10 atmospheres. The processing gas can interact with the layerbeing processed so as to anneal the layer, e.g., by modifying the layeror reacting with the material to form a new layer. The processing gascan include hydrogen, e.g., the processing gas can be hydrogen gas H₂.Alternatively, the processing gas can be a precursor gas that serves asa source for the material to be formed on the substrate, e.g., for adeposition process. To pressurize the first chamber 202, the gasdelivery system 206 introduces the processing gas into the first chamber202. In some cases, the gas delivery system 206 can also introduce steaminto the first chamber 202 to increase the pressure within the firstchamber 202.

The gas delivery system 206 can include an exhaust system 211 to exhaustthe processing gas from the first chamber 202, thereby depressurizingthe first chamber 302. The vacuum processing system 208 is operated tocontrol the pressure of the second chamber 204 to be at a vacuum ornear-vacuum pressure, e.g., less than 1 milliTorr. For example, thevacuum processing system 208 lowers a pressure within the second chamber204 to near vacuum, thereby creating the appropriate low pressureenvironment for transfer of the substrate.

A valve assembly 212 between the first chamber 202 and the secondchamber 204 isolates the pressure within the first chamber 202 from thepressure within the second chamber 204. The high-pressure environmentwithin the first chamber 202 can thus be separated and sealed from thelow pressure environment within the second chamber 204. The valveassembly 212 is openable to enable the substrate to be transferred fromthe first chamber 202 directly into the second chamber 204 or to enablethe substrate to be transferred from the second chamber 204 directlyinto the first chamber 202.

In some implementations, the high-pressure system 200 includes aforeline 214 connected to a transfer chamber, e.g., one of the transferchambers 102, 104, and connected to an outside environment. An isolationvalve 216 is arranged along the foreline 214 to isolate the pressurewithin the second chamber 204 from the pressure of the outsideenvironment. The isolation valve 216 can be operated to adjust thepressure within the second chamber 204 and to release gases within thesecond chamber 204. The isolation valve 216 can be operated inconjunction with the vacuum processing system 208 to regulate thepressure within the second chamber 204.

FIGS. 3-6 depict various embodiments of high-pressure processing systemsfor processing a layer on a substrate. The pressure of chambers of thesehigh-pressure processing systems can be controlled using systems similarto those described with respect to FIG. 2.

Referring to FIG. 3, a high-pressure processing system 300 includes afirst chamber 302, a pedestal 304, a second chamber 306, and acontroller (e.g., the controller 122). The high-pressure processingsystem 300 further includes a vacuum processing system (not shown)similar to the vacuum processing system 208 and a gas delivery system307 similar to the gas delivery system 206 described with respect toFIG. 2. For example, the gas delivery system 307 includes an input line307 a and an exhaust line 307 b. The processing gas is introduced intothe first chamber 302 through the input line 307 a, and the processinggas is exhausted from the first chamber 302 through the exhaust line 307b.

The pedestal 304 supports a substrate 314 on which a layer of materialis to be processed, e.g., annealed or deposited. The pedestal 304 ispositioned or positionable within the first chamber 302. In someimplementations, the substrate 314 sits directly on a flat top surfaceof the pedestal. In some implementations, the substrate 314 sits on pins330 that project from the pedestal.

The high-pressure processing system 300 includes an inner wall 320, abase 322, and an outer wall 324. The first chamber 302 is provided by avolume within the inner wall 320, e.g., between the inner wall 320 andthe base 322. The second chamber 306 is provide by a volume outside theinner wall 320, e.g., between the inner wall 320 and the outer wall 324.

The high-pressure processing system 300 further includes a valveassembly 316 between the first chamber 302 and the second chamber 306that provides the functionality of the valve assembly 212 of FIG. 2,i.e., it can be operated to isolate the first chamber 302 from thesecond chamber 306. For example, the valve assembly 316 includes theinner wall 320, the base 322, and an actuator 323 to move the base 322relative to the inner wall 320. The actuator 323 can be controlled todrive the base 322 to move vertically, e.g., away from or toward thewalls 320 defining the first chamber 302. A bellows 328 can be used toseal the second chamber 306 from the external atmosphere whilepermitting the base 322 to move vertically. The bellows 328 can extendfrom a bottom of the base 322 to a floor of the second chamber 306formed by the outer wall 324.

When the valve assembly 316 is in a closed position, the base 322contacts the walls 320 such that a seal is formed between the base 322and the walls 320, thus separating the second chamber 306 from the firstchamber 302. The second chamber 306 may be referred to as an outerchamber and the first chamber 302 may be referred to as an innerchamber. The actuator 323 is operated to drive the base 322 toward theinner walls 320 with sufficient force to form the seal. The sealinhibits air from the first high-pressure chamber 302 from beingexhausted into the low-pressure second chamber 306.

When the valve assembly 316 is in an open position, the base 322 isspaced apart from the walls 320, thereby allowing air to be conductedbetween the first and second chambers 302, 306 and also allowing thesubstrate 314 to be accessed and transferred to another chamber.

Because the pedestal 304 is supported on the base 322, the pedestal 304is thus also movable relative to the inner walls 320. The pedestal 304can be moved to enable the substrate 314 to be more easily accessible bythe transfer robot. For example, an arm of a transfer robot 106 or 108(see FIG. 1) can extend through an aperture (or slit) 326 in the outerwall 324. When the valve assembly 316 is in the open position, the robotarm can pass through the gap between the inner wall 320 and the base 322to access the substrate 314.

In some implementations, the high-pressure processing system 300includes one or more heating elements 318 configured to apply heat tothe substrate 314. The heat from the heating elements 318 can besufficient to anneal the substrate 314 when the substrate 314 issupported on the pedestal 304 and the processing gas (if used) has beenintroduced into the first chamber 302. The heating elements 318 may beresistive heating elements. The one or more heating elements 318 may bepositioned in, e.g., embedded in, the inner walls 320 defining the firstchamber 302, e.g., in a ceiling of the first chamber 302 provided by theinner walls 320. This heats the inner wall 320, causing radiative heatto reach the substrate 314. The substrate 314 can be held by thepedestal 304 in close proximity, e.g., 2-10 mm, to the ceiling toimprove transmission of heat from the inner wall 320 to the substrate314.

However, the one or more heating elements 318 may be arranged in otherlocations within the high-pressure processing system 300, e.g., withinthe side walls rather than the ceiling. An example of a heating element318 includes a discrete heating coil. Instead of or in addition to aheater embedded in the inner wall, a radiative heater, e.g., an infraredlamp, can be positioned outside the first chamber 302 and directinfrared radiation through a window in the inner wall 320. Electricalwires connect an electrical source (not shown), such as a voltagesource, to the heating element, and can connect the one or more heatingelements 318 to the controller.

The controller is operably connected to the vacuum processing system,the gas delivery system 307, and the valve assembly 316 for controllingoperations to process, e.g., anneal or deposit, the layer of material onthe substrate 314. In some implementations, the controller may also beoperably connected to other systems. For example, the controller canalso be operably connected to one or more of the transfer robots 106,108, the one or more heating elements 318, and/or the actuator 323. Insome cases, the controller 122 shown in FIG. 1 includes the controllerof the high-pressure processing system 300.

In processing a layer of material on the substrate 314, the controllercan operate the vacuum processing system to depressurize the secondchamber 306 to a low-pressure state, e.g., to a state in which thesecond chamber 306 has a pressure less than 1 atmosphere, to prepare fortransfer of the substrate 314 through the second chamber 306. Thelow-pressure state can be a near-vacuum state, e.g., a pressure lessthan 1 milliTorr. The substrate 314 is moved through the second chamber306 by a transfer robot, e.g., one of the transfer robots 106, 108,while the second chamber 306 is at the low-pressure so thatcontamination and oxidation of the substrate 314 can be inhibited. Thedouble walls can help ensure safer processing, e.g., annealing.

The substrate 314 is transferred into the first chamber 302 forprocessing. To transfer the substrate 314 into the first chamber 302,the controller can operate the valve assembly 316, e.g., open the valveassembly 316 to provide an opening through which the substrate 314 canbe transferred into the first chamber 302. The controller can operatethe transfer robot to carry the substrate 314 into the first chamber 302and to place the substrate 314 on the pedestal 304.

After the substrate 314 is transferred into the first chamber 302, thecontroller can operate the valve assembly 316 to close the opening,e.g., close the valve assembly 316, thereby isolating the first andsecond chambers 302, 306 from one another. With the valve assembly 316closed, pressures in the first chamber 302 and the second chamber 306can be set to different values. The controller can operate the gasdelivery system 307 to introduce the processing gas into the firstchamber 302 to pressurize the first chamber 302 and to form the layer ofmaterial onto the substrate 314. The introduction of the processing gascan increase the pressure within the first chamber 302 to, for example,10 atmospheres or more.

In some implementations, the processing gas interacts with the materialon the substrate as to anneal the material, e.g., by modifying the layeror reacting with the material to form a new layer. Alternatively, theprocessing gas can include the material to be deposited onto thesubstrate 314, and the proper temperature and pressure conditions in thefirst chamber 302 can cause the deposition of the material to occur.During the processing of the substrate, the controller can operate theone or more heating elements 318 to add heat to the substrate 314 tofacilitate deposition of the layer of material on the substrate 314.

When modification or formation of the layer of material on the substrate314 is complete, the substrate 314 can be removed from the first chamber302 using the transfer robot and, if necessary, transferred to asubsequent process chamber. Alternatively, the substrate 314 istransferred into a load lock chamber, e.g., one of the load lockchambers 128. To prepare for transfer of the substrate 314 out of thefirst chamber 302, the controller can operate the exhaust system of thegas delivery system 307 to depressurize the first chamber 302 before thevalve assembly 316 is opened. In particular, before the substrate 314 istransferred out of the first chamber 202, the processing gas isexhausted from the first chamber 302 to reduce the pressure within thefirst chamber 202. The pressure can be reduced to a near-vacuum pressuresuch that the pressure differential between the first chamber 302 andthe second chamber 306 can be minimized.

To enable the substrate 314 to be transferred out of the first chamber302, the controller can open the valve assembly 316. The opened valveassembly 316 provides an opening through which the substrate 314 ismoved to be transferred into the second chamber 306. In particular, theopened valve assembly 316 enables the substrate 314 to be transferreddirectly into the second chamber 306, e.g., into the low pressureenvironment of the second chamber 306. The controller can then operatethe transfer robot to transfer the substrate 314 to another portion of aprocessing platform, e.g., the processing platform 100. For example, thesubstrate 314 is first transferred directly into the second chamber 306and then is transferred to the appropriate processing chamber forfurther processing or to the load lock chamber to remove the substratefrom the processing platform.

Referring to FIG. 4, in another embodiment, a high-pressure processingsystem 400 includes a first chamber 402, a pedestal 404, a secondchamber 406, and a controller (not shown). The high-pressure processingsystem 400 is similar to the high-pressure processing system 300described with respect to FIG. 3; unless otherwise specified the variousoptions and implementations are also applicable to this embodiment.

For example, the gas delivery system and the vacuum processing system ofthe high-pressure processing system 400 are operated in a similar mannerto maintain the low and high pressure environments for a substrate 414processed using the high-pressure processing system 400. The secondchamber 406 can be defined by volume between inner walls 420 and outerwalls 424. In addition, the substrate 414 is also supportable on thepedestal 404 for processing within the first chamber 402. Again, thesubstrate can sit directly on the pedestal 404, or sit on lift pins 430that extend through the pedestal.

The high-pressure processing system 400 differs from the high-pressureprocessing system 300 of FIG. 3 in a few regards. First, inner walls 420defining the first chamber 402 are not movable relative to a base 422defining the first chamber 402. The pedestal 404 is thus fixed relativeto the inner walls 420 and the base 422. In some examples, the pedestal404 is fixed to the base 422 defining the first chamber 402.

Rather than being arranged in the walls 420 of the first chamber 402, asis the case for the one or more heating elements 318 of the embodimentof FIG. 3, one or more heating elements 418 of the embodiment depictedin FIG. 4 are arranged within the pedestal 404. The substrate 414 isthus heated through contact with the pedestal 404.

The high-pressure processing system 400 further includes a valveassembly 416 between the first chamber 402 and the second chamber 406that, similar to the valve assembly 316 of FIG. 3, isolates the firstchamber 402 from the second chamber 406. However, in contrast to thevalve assembly 316, the valve assembly 416 is not formed by the walls420 and the base 422 defining the first chamber 402, but rather isformed by an arm 425 movable relative to the inner walls 420 and thebase 422 of the first chamber 402. The arm 425 may be movable relativeto the outer walls 420 and the base 422 of the first chamber 402.

In particular, the valve assembly 416 includes a slit valve 423 betweenthe first chamber 402 and the second chamber 406. The slit valve 423includes a slit 423 a and the arm 425. The slit 423 a extends throughone of the inner walls 420 of the first chamber 402. A proximal end 424a of the arm 425 is positioned outside of the first chamber 402 while adistal end 425 b of the arm 425 is positioned within the first chamber402. The proximal end 425 a of the arm 425 can be positioned within thesecond chamber 406 and be driven by an actuator positioned within thesecond chamber 406. Alternatively, the proximal end 425 a of the arm 425is positioned outside of the second chamber 406 and is thus driven by anactuator 428 that is also positioned outside of the second chamber 406.

The arm 425 extends through the slit 423 a and is movable relative tothe walls 420 so that the arm 425 can be moved to a position in which itforms a seal with the walls 420. The actuator 428 is coupled to theproximal end 425 a of the arm 425 and drives the distal end 425 b of thearm 425 relative to the walls 420. The arm 425 is also movablevertically to cover or uncover the slit 423 a. In particular, theproximal end 425 a of the arm 425 can be or include a flange thatextends substantially parallel to the adjacent inner surface of theinner wall 420. The arm 425 is also movable and driven laterally so thatthe distal end 425 b of the arm 425 can engage or disengage the wall420.

The arm 425 can also extend through a slit (or aperture) 426 in theouter wall 424.

Like the valve assembly 316, the valve assembly 416 is movable betweenan open position and a closed position. When the valve assembly 416 isin the closed position, the distal end 425 b of the arm 425 covers theslit 426 and contacts one of the walls 420, thereby forming the seal toisolate the first chamber 402 from the second chamber 406. Inparticular, the distal end 425 b of the arm 425, e.g., the flange,contacts an inner surface of the wall 420 defining the first chamber402.

When the valve assembly 416 is in the open position, the distal end 425b of the arm 425 is spaced laterally apart from the wall 420, e.g., theinner surface of the wall 420. In addition, the distal end 425 b of thearm 425 is positioned vertically so that the slit 426 is uncovered. Theslit 426 thus provides an opening that enables fluidic communicationbetween the first chamber 402 and the second chamber 406 and that alsoenables the substrate 414 to be moved in and out of the first chamber402, e.g., by a robot as discussed above.

The controller can operate the high-pressure processing system 400 in amanner similar to the process described with respect to the controllerof the high-pressure processing system 300 to transfer the substrate 414into and out of the first chamber 402 and to form the layer of materialon the substrate 414. In this process, to open and close the valveassembly 416, the controller can operate the actuator 428 to drive thearm 425.

An advantage of the configuration shown in FIG. 4 is that the pressurewithin the first chamber 402 helps force the distal end 425 b of the arm425 against the inner surface of the inner wall 420. Consequently, incontrast to the configuration shown in FIG. 3, the actuator can be lesspowerful.

Referring to FIG. 5, in a further embodiment, a high-pressure processingsystem 500 includes a first chamber 502, a pedestal 504, a secondchamber 506, and a controller (not shown). The high-pressure processingsystem 500 is similar to the high-pressure processing system 400described with respect to FIG. 4; unless otherwise specified the variousoptions and implementations are also applicable to this embodiment.

For example, the gas delivery system and the vacuum processing system ofthe high-pressure processing system 500 are operated in a similar mannerto maintain the low and high pressure environments for a substrate (notshown) processed using the high-pressure processing system 500. Inaddition, the substrate is also supportable on the pedestal 504 or liftpins for processing within the first chamber 502.

The high-pressure processing system 500 differs from the high-pressureprocessing system 400 of FIG. 4 in that the pedestal 504 is mounted to aceiling 521 defining the first chamber 502 rather than to a base 522defining the first chamber 502. Like the pedestal 504, the pedestal 504is fixed relative to the walls 520, the ceiling 521, and the base 522.In addition, one or more heating elements 518 of the high-pressureprocessing system 500 are arranged within the pedestal 504. To positionthe substrate on the pedestal 504 such that the substrate is supportedon the pedestal 504, the substrate is inserted between plates of thepedestal 504. The one or more heating elements 518 are arranged relativeto the plates such that, when the substrate is inserted into a slotdefined by the plates of the pedestal 504, the one or more heatingelements 518 can uniformly apply heat to the substrate.

An advantage of the configuration of FIG. 5 is that the first (e.g.,inner) chamber 502 is more easily accessed for maintenance or repair. Inparticularly, to access the pedestal 504, a top lid 528 of the outerwall 526 can be removed. Then the ceiling 521 and pedestal 504 can beremoved as a unit.

Referring to FIG. 6, in a further embodiment, a high-pressure processingsystem 600 includes a first chamber 602, a pedestal 604, a secondchamber 606, and a controller (not shown). The high-pressure processingsystem 600 is similar to the high-pressure processing system 400described with respect to FIG. 4; unless otherwise specified the variousoptions and implementations are also applicable to this embodiment.

For example, the gas delivery system and the vacuum processing system ofthe high-pressure processing system 600 are operated in a similar mannerto maintain the low and high pressure environments for a substrate 614processed using the high-pressure processing system 600. In addition,the substrate 614 is also supportable on the pedestal 604 for processingwithin the first chamber 602.

The high-pressure processing system 600 differs from the high-pressureprocessing system 400 of FIG. 4 in that an arm 625 of a valve assembly616 of the high-pressure processing system 400 contacts an outer surfaceof an inner wall 620 defining the first chamber 602, rather than aninner surface of the inner wall 620, to cover an slit (or aperture) 623a in the inner wall 620. Like the valve assembly 416, the valve assembly616 operates to isolate the first chamber 602 from the second chamber606. The valve assembly 616 can be positioned between the first chamber602 and the second chamber 606.

The valve assembly 616 includes a slit valve 623 between the firstchamber 602 and the second chamber 606. The slit valve 623 includes anaperture 623 a, e.g., a slit, and the arm 625. The slit 623 a extendsthrough one of the inner walls 620 that provide the first chamber 602. Aproximal end 625 a of the arm 625 is positioned outside of the firstchamber 602. Rather than being positioned within the first chamber 602as is the case for the arm 425, a distal end 625 b of the arm 625 ispositioned outside of the first chamber 602. Thus, the arm 625 does notextend through the aperture (or slit) 626.

The arm 625 is movable relative to the walls 620 so that the arm 625 canbe moved to a position in which it forms a seal with the walls 620. Forexample, the high-pressure processing system 600 includes an actuator628 operable to drive the arm 625. The actuator 628 is coupled to theproximal end 625 a of the arm 625 and is driven to move the distal end625 b of the arm 625 relative to the walls 620.

Like the valve assembly 316, the valve assembly 616 is movable betweenan open position and a closed position. For example, when the valveassembly 616 is in the closed position, the distal end 625 b of the arm625 contacts one of the walls 620, thereby forming the seal to isolatethe high pressure in the first chamber 602 from the low pressure in thesecond chamber 606. In particular, the distal end 625 b of the arm 625contacts an outer surface of the wall 620 defining the first chamber 602and is positioned to cover the slit 626.

When the valve assembly 616 is in the open position, the distal end 625b of the arm 625 does not contact the wall 620, e.g., the inner surfaceof the wall 620. The slit 626 thus provides an opening that enablesfluidic communication between the first chamber 602 and the secondchamber 606 and that also enables the substrate 614 to be moved in andout of the first chamber 602.

The controller can operate the high-pressure processing system 600 in amanner similar to the process described with respect to the controllerof the high-pressure processing system 300 to transfer the substrate 614and to form the layer of material on the substrate 614. In this process,to open and close the valve assembly 616, the controller can operate theactuator 628 to drive the arm 625.

An advantage of the configuration shown in FIG. 6 is that the slit 626is relatively small, e.g., as compared to the base 322 in theconfiguration shown in FIG. 3. As such, when high pressure isestablished in the first chamber 602, less force is needed to hold thevalve in the closed position. Consequently, in contrast to theconfiguration shown in FIG. 3, the actuator can be less powerful.

FIG. 7 illustrate a pedestal 700 with heating elements in accordance tocertain embodiments. The pedestal 700 can, for example, correspond toone of the pedestals 404, 504, 604. The pedestal 700 includes a lift pinassembly 702 having a lift pin 704, which is disposed at least partiallyin an opening 706 defined in plates 708, 710. The lift pin 704 is usedto lift the substrate from the pedestal 700 such that a transfer robot,e.g., one of the transfer robots 106, 108, can access and move thesubstrate out of a chamber, e.g., the first chamber 202, 302, 402, 502,or 602. The lift pin 704 is driven by an actuator 705 from a firstposition in which the lift pin 704 is recessed within the pedestal 700to a second position in which the lift pin 704 protrudes from thepedestal 700. In the second position, the lift pin 704 supports asubstrate on the pedestal 700 above the pedestal, thereby providingsufficient height above the pedestal 700 for the transfer robot to graspthe substrate.

Controllers and computing devices can implement these operations andother processes and operations described herein. A controller, e.g., thecontroller 122, 210 or one of the controllers of the high-pressureprocessing systems 300, 400, 500, or 600, can include one or moreprocessing devices connected to the various components, systems, andsubsystems of the high pressure systems described herein.

The controller and other computing devices part of systems describedherein can be implemented in digital electronic circuitry, or incomputer software, firmware, or hardware. For example, the controllercan include a processor to execute a computer program as stored in acomputer program product, e.g., in a non-transitory machine readablestorage medium. Such a computer program (also known as a program,software, software application, or code) can be written in any form ofprogramming language, including compiled or interpreted languages, andit can be deployed in any form, including as a standalone program or asa module, component, subroutine, or other unit suitable for use in acomputing environment.

While this document contains many specific implementation details, theseshould not be construed as limitations on the scope of any inventions orof what may be claimed, but rather as descriptions of features specificto particular embodiments of particular inventions. Certain featuresthat are described in this document in the context of separateembodiments can also be implemented in combination in a singleembodiment. Conversely, various features that are described in thecontext of a single embodiment can also be implemented in multipleembodiments separately or in any suitable subcombination. Moreover,although features may be described above as acting in certaincombinations and even initially claimed as such, one or more featuresfrom a claimed combination can in some cases be excised from thecombination, and the claimed combination may be directed to asubcombination or variation of a subcombination.

A number of implementations have been described. Nevertheless, it willbe understood that various modifications may be made. For example:

-   -   The processing system can be used for metal annealing, e.g.,        annealing of copper or cobalt. For such an annealing process,        the processing gas can be hydrogen gas (H₂) or deuterium gas        (D₂).    -   The processing system can be used for annealing of silicon        dioxide (SiO₂). For such an annealing process, the processing        gas can be water vapor or steam.    -   The processing system can be used for annealing of        silicon-germanium material. For such an annealing process, the        processing gas can be deuterium gas (D2).    -   While formation of a metal silicide layer from a cobalt or        nickel layer film is described above, in some implementations,        other materials can be used. For example, other materials can        include titanium, tantalum, tungsten, molybdenum, platinum,        iron, niobium, palladium, and combinations thereof, and other        alloys including nickel cobalt alloys, cobalt tungsten alloys,        cobalt nickel tungsten alloys, doped cobalt and nickel alloys,        or nickel iron alloys, to form a metal silicide material.    -   Although described above in the context of a system for forming        a layer, depending on the gasses provided, the high-pressure        chamber can be used for etching system. Alternatively, the        high-pressure chamber can be filled with an inert gas, and the        high-pressure chamber can be used purely for heat treatment at        high pressure.    -   The processing platforms described herein can include other        types of processing chambers. For example, a processing platform        can include an etching chamber to etch patterns onto a surface        of a substrate.    -   Each of the different chambers of a processing platform can have        varying pressure environments, ranging from near-vacuum to more        than 10 atmospheres. The isolation valves, e.g., vacuum valves,        between the chambers can isolate the pressures from one another        such that these varying pressure environments can be maintained        within each chamber.    -   In some situations, e.g., where a film that does not need to be        isolated from the atmosphere is formed, the high-pressure        processing system illustrated in FIGS. 2-6 could be a        stand-alone system rather than integrated into a multi-chamber        system. In this case, the low-pressure chamber would still be        useful for isolating the high-pressure chamber from the external        environment, e.g., in the case of leaks.

Accordingly, other implementations are within the scope of the claims.

What is claimed is:
 1. A high-pressure processing system comprising: afirst chamber having a support to hold a substrate during processing; asecond chamber; and a gas delivery system configured to pressurize anddepressurize the first chamber, the gas delivery system comprising: anexhaust line passing through a top of the first chamber and a top of thesecond chamber; and an input line passing through the top of the firstchamber and the top of the second chamber.
 2. The high-pressureprocessing system of claim 1 further comprising a valve assemblydisposed between the first chamber and the second chamber and configuredto isolate the first chamber from the second chamber.
 3. Thehigh-pressure processing system of claim 2, wherein the valve assemblycomprises: a slit that passes through a wall between the first chamberand the second chamber; and an arm configured cover and uncover theslit.
 4. The high-pressure processing system of claim 1, wherein thesecond chamber at least partially surrounds the first chamber.
 5. Thehigh-pressure processing system of claim 1, wherein the gas deliverysystem is configured to depressurize the first chamber by removing a gasfrom the first chamber via the exhaust line, and to pressurize the firstchamber by introducing the gas into the first chamber via the inputline.
 6. The high-pressure processing system of claim 5, wherein the gasis one of a processing gas and steam.
 7. The high-pressure processingsystem of claim 1, wherein pressurizing the first chamber comprisesincreasing a pressure of the first chamber to at least about 10atmospheres.
 8. The high-pressure processing system of claim 1, whereindepressurizing the second chamber comprises decreasing a pressure of thefirst chamber to be less than or equal to about 1 atmosphere.
 9. Thehigh-pressure processing system of claim 1 further comprising a vacuumprocessing system configured to control a pressure of the secondchamber.
 10. A method for operating a processing system, the methodcomprises: depressurizing a first chamber to equalize a pressure of thefirst chamber with a pressure of a second chamber; loading a substrateon a pedestal of a first chamber by passing the substrate through thesecond chamber; and introducing a gas into the first chamber to increasethe pressure of the first chamber relative to the pressure of the secondchamber.
 11. The method of claim 10, wherein a valve assembly isconfigured to isolate the first chamber from the second chamber, andwherein the method further comprises: closing the valve assembly toisolate the first chamber from the second chamber after transferring thesubstrate into the first chamber.
 12. The method of claim 11, whereinthe gas is introduced into the first chamber after closing the valveassembly.
 13. The method of claim 11 further comprising: opening thevalve assembly after depressurizing the first chamber.
 14. The method ofclaim 10, wherein the gas is one of steam and a processing gas.
 15. Themethod of claim 10, wherein depressurizing the first chamber comprisesremoving the gas from the first chamber via an exhaust line, andintroducing the gas into the first chamber comprises introducing the gasvia an input line, wherein the exhaust line and the input line passthrough a top of the first chamber and the second chamber.
 16. Themethod of claim 10, wherein increasing the pressure of the first chambercomprises increasing the pressure of the first chamber to at least about10 atmospheres, and depressurizing the first chamber comprisingdecreasing the pressure of the first chamber to be less than or equal toabout 1 atmosphere.
 17. A semiconductor fabrication apparatus,comprising: a central chamber; a high-pressure processing system coupledwith the central chamber, the high-pressure processing systemcomprising: a first chamber having a support to hold a substrate duringprocessing; a second chamber; and a gas delivery system configured topressurize and depressurize the first chamber, the gas delivery systemcomprising: an exhaust line passing through a top of the first chamberand a top of the second chamber; and an input line passing through thetop of the first chamber and the top of the second chamber; and atransfer robot positioned within the central chamber, the transfer robotconfigured to: load the substrate on the support by passing thesubstrate from the central chamber and through the second chamber. 18.The semiconductor fabrication apparatus of claim 17, further comprisinga controller configured to control the gas delivery system to:depressurize the first chamber by removing a gas from the first chambervia the exhaust line; and pressurize the first chamber by introducingthe gas into the first chamber via the input line.
 19. The semiconductorfabrication apparatus of claim 18, wherein the high-pressure processingsystem further comprises a valve assembly disposed between the firstchamber and the second chamber, and wherein the controller is furtherconfigure to control the valve assembly to isolate the first chamberfrom the second chamber.
 20. The semiconductor fabrication apparatus ofclaim 18, wherein the gas is one of a processing gas and steam.